Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

Udit Narula; Cher Ming Tan; Chao Sung Lai

doi:10.1038/srep44112

Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

Sci Rep. 2017 Mar 9:7:44112. doi: 10.1038/srep44112.

Authors

Udit Narula^{1

2}, Cher Ming Tan^{1

2

3

4

5}, Chao Sung Lai^{2

6

7}

Affiliations

¹ Center for Reliability Sciences &Technologies, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.
² Department of Electronic Engineering, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.
³ Department of Mechanical Engineering, Ming Chi University of Technology, 84, Gungjuan Road, Taishan, New Taipei City, 24301, ROC Taiwan.
⁴ Department of Urology, Chang Gung Memorial Hospital, Kwei-Shan, Taoyuan, 33305, ROC Taiwan.
⁵ Institute of Radiation Research, College of Medicine, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.
⁶ Department of Materials Engineering, Ming Chi University of Technology, Taishan, New Taipei City 24301, Taiwan.
⁷ Department of Nephrology, Chang Gung Memorial Hospital, Kwei-Shan, Taoyuan 33305, Taiwan.

Abstract

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

Publication types

Research Support, Non-U.S. Gov't