Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

Daekyoung Kim; Yan Fu; Sunho Kim; Woosuk Lee; Ki-Heon Lee; Ho Kyoon Chung; Hoo-Jeong Lee; Heesun Yang; Heeyeop Chae

doi:10.1021/acsnano.6b08142

Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

ACS Nano. 2017 Feb 28;11(2):1982-1990. doi: 10.1021/acsnano.6b08142. Epub 2017 Feb 14.

Authors

Daekyoung Kim, Yan Fu, Sunho Kim, Woosuk Lee, Ki-Heon Lee¹, Ho Kyoon Chung, Hoo-Jeong Lee, Heesun Yang¹, Heeyeop Chae

Affiliation

¹ Department of Materials Science and Engineering, Hongik University , Seoul 121-791, Korea.

PMID: 28187259
DOI: 10.1021/acsnano.6b08142

Abstract

We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoO_x hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.

Keywords: all-solution-processed; flexible device; inverted architecture; quantum dot-light-emitting diode.

Publication types

Research Support, Non-U.S. Gov't