Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2

Hye Yun Jeong; Youngjo Jin; Seok Joon Yun; Jiong Zhao; Jaeyoon Baik; Dong Hoon Keum; Hyun Seok Lee; Young Hee Lee

doi:10.1002/adma.201605043

Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS₂

Adv Mater. 2017 Apr;29(15). doi: 10.1002/adma.201605043. Epub 2017 Feb 7.

Authors

Hye Yun Jeong^{1

2}, Youngjo Jin^{1

2}, Seok Joon Yun^{1

2}, Jiong Zhao^{1

2}, Jaeyoon Baik³, Dong Hoon Keum^{1

2}, Hyun Seok Lee^{1

2}, Young Hee Lee^{1

2}

Affiliations

¹ Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
² Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
³ Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.

PMID: 28170110
DOI: 10.1002/adma.201605043

Abstract

Single-crystalline monolayer hexagonal WS₂ is segmented into alternating triangular domains: sulfur-vacancy (SV)-rich and tungsten-vacancy (WV)-rich domains. The WV-rich domain with deep-trap states reveals an electron-dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV-rich domain with shallow-donor states by one order of magnitude. The vacancy-induced strain and doping effects are investigated via Raman and scanning photoelectron microscopy.

Keywords: chalcogen vacancies; defect states; defect-induced strain; hexagonal WS2; metal vacancies.