Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films

Tao Wan; Bo Qu; Haiwei Du; Xi Lin; Peiyuan Guan; Qianru Lin; Nan Chen; Thiam Teck Tan; Tao Hang; Dewei Chu

doi:10.1016/j.jcis.2017.01.095

Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films

J Colloid Interface Sci. 2017 May 15:494:178-184. doi: 10.1016/j.jcis.2017.01.095. Epub 2017 Jan 25.

Authors

Tao Wan¹, Bo Qu¹, Haiwei Du¹, Xi Lin¹, Peiyuan Guan¹, Qianru Lin¹, Nan Chen¹, Thiam Teck Tan¹, Tao Hang², Dewei Chu³

Affiliations

¹ School of Materials Science and Engineering, The University of New South Wales, Sydney 2052, Australia.
² State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, People's Republic of China. Electronic address: hangtao@sjtu.edu.cn.
³ School of Materials Science and Engineering, The University of New South Wales, Sydney 2052, Australia. Electronic address: d.chu@unsw.edu.au.

PMID: 28157636
DOI: 10.1016/j.jcis.2017.01.095

Abstract

In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO₃) films have been investigated. Undoped SrTiO₃ film shows I-V characteristics of typical nonlinear resistor and no resistance hysteresis loops are observed. On the contrary, Cr-doped SrTiO₃ films show stable and reversible hysteresis loops, which can be controlled by applying different voltage bias. Based on a series of characterization results, including X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS), we infer that Ti⁴⁺ is substituted by Cr³⁺, giving rise to increased concentration of oxygen vacancies. Therefore, the observed resistance switching phenomenon is attributed to voltage driven oxygen vacancy migration. Furthermore, gradually decreased overall resistance is also realized under repeated sweeping cycles.

Keywords: Cr-doped SrTiO(3); Oxygen vacancies; Resistance switching; Solution processed.

Publication types

Research Support, Non-U.S. Gov't