Porous GaN electrode for anodic stripping voltammetry of silver(I)

Miao-Rong Zhang; Ge-Bo Pan

doi:10.1016/j.talanta.2017.01.016

Porous GaN electrode for anodic stripping voltammetry of silver(I)

Talanta. 2017 Apr 1:165:540-544. doi: 10.1016/j.talanta.2017.01.016. Epub 2017 Jan 7.

Authors

Miao-Rong Zhang¹, Ge-Bo Pan²

Affiliations

¹ Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China; University of Chinese Academy of Sciences, 100049 Beijing, PR China.
² Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China. Electronic address: gbpan2008@sinano.ac.cn.

PMID: 28153296
DOI: 10.1016/j.talanta.2017.01.016

Abstract

Here we demonstrate porous GaN electrode can be applied for trace Ag(I) detection. Compared to traditional planar electrodes, porous GaN electrode can detect lower concentration of Ag(I) as it possesses more deposition sites (crystal defects) and larger surface area. Under the optimum conditions, porous GaN electrode shows a linear voltammetric response in the Ag(I) concentration range from 1 to 100ppb with the detection limit of 0.5ppb. Such an unmodified, high-porosity and chemically stable electrode is promising to operate in real samples.

Keywords: Anodic stripping voltammetry; Porous GaN; Silver.