Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

Mohamed Tarek Ghoneim; Muhammad Mustafa Hussain

doi:10.1002/smll.201601801

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

Small. 2017 Apr;13(16). doi: 10.1002/smll.201601801. Epub 2017 Feb 1.

Authors

Mohamed Tarek Ghoneim¹, Muhammad Mustafa Hussain¹

Affiliation

¹ Integrated Nanotechnology Lab and Integrated Disruptive Electronic Applications (IDEA) Lab, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.

PMID: 28145623
DOI: 10.1002/smll.201601801

Abstract

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

Keywords: deep reactive ion etching; flexible electronics; microfabrication; silicon electronics; soft/hard mask.

Publication types

Research Support, Non-U.S. Gov't