Conductivity Modulation of Gold Thin Film at Room Temperature via All-Solid-State Electric-Double-Layer Gating Accelerated by Nonlinear Ionic Transport

Tetsuya Asano; Yukihiro Kaneko; Atsushi Omote; Hideaki Adachi; Eiji Fujii

doi:10.1021/acsami.6b15662

Conductivity Modulation of Gold Thin Film at Room Temperature via All-Solid-State Electric-Double-Layer Gating Accelerated by Nonlinear Ionic Transport

ACS Appl Mater Interfaces. 2017 Feb 15;9(6):5056-5061. doi: 10.1021/acsami.6b15662. Epub 2017 Feb 2.

Authors

Tetsuya Asano¹, Yukihiro Kaneko¹, Atsushi Omote¹, Hideaki Adachi¹, Eiji Fujii¹

Affiliation

¹ Advanced Research Division, Panasonic Corporation , 1006 Kadoma, Osaka 571-8501, Japan.

PMID: 28128922
DOI: 10.1021/acsami.6b15662

Abstract

We demonstrated the field-effect conductivity modulation of a gold thin film by all-solid-state electric-double-layer (EDL) gating at room temperature using an epitaxially grown oxide fast lithium conductor, La_2/3-xLi_3xTiO₃ (LLT), as a solid electrolyte. The linearly increasing gold conductivity with increasing gate bias demonstrates that the conductivity modulation is indeed due to carrier injection by EDL gating. The response time becomes exponentially faster with increasing gate bias, a result of the onset of nonlinear ionic transportation. This nonlinear dynamic response indicates that the ionic motion-driven device can be much faster than would be estimated from a linear ionic transport model.

Keywords: electric-double-layer gating; iontronics; nanoionics; nonlinear ionic transport; solid-state electric double layer; solid-state ionics.