High Speed Epitaxial Perovskite Memory on Flexible Substrates

Saidur R Bakaul; Claudy R Serrao; Oukjae Lee; Zhongyuan Lu; Ajay Yadav; Carlo Carraro; Roya Maboudian; Ramamoorthy Ramesh; Sayeef Salahuddin

doi:10.1002/adma.201605699

High Speed Epitaxial Perovskite Memory on Flexible Substrates

Adv Mater. 2017 Mar;29(11). doi: 10.1002/adma.201605699. Epub 2017 Jan 23.

Authors

Affiliations

¹ Electrical Engineering & Computer Sciences, University of California, Berkeley, CA, 94720, USA.
² Chemical and Biomolecular Engineering, University of California, Berkeley, CA, 94720, USA.
³ Materials Science & Engineering, University of California, Berkeley, CA, 94720, USA.
⁴ Material Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA.

PMID: 28112840
DOI: 10.1002/adma.201605699

Abstract

Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.

Keywords: complex oxides; ferroelectrics; flexible electronics; single crystals.