Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

Wen-Wei Shen; Kuan-Neng Chen

doi:10.1186/s11671-017-1831-4

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

Nanoscale Res Lett. 2017 Dec;12(1):56. doi: 10.1186/s11671-017-1831-4. Epub 2017 Jan 19.

Authors

Wen-Wei Shen¹, Kuan-Neng Chen²

Affiliations

¹ Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
² Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan. knchen@mail.nctu.edu.tw.

Abstract

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

Keywords: Three-dimensional integrated circuit (3D IC); Through-silicon via (TSV).