Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

Runze Han; Peng Huang; Yudi Zhao; Zhe Chen; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang

doi:10.1186/s11671-016-1807-9

Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

Nanoscale Res Lett. 2017 Dec;12(1):37. doi: 10.1186/s11671-016-1807-9. Epub 2017 Jan 13.

Authors

Runze Han¹, Peng Huang¹, Yudi Zhao¹, Zhe Chen¹, Lifeng Liu¹, Xiaoyan Liu¹, Jinfeng Kang²

Affiliations

¹ Institute of Microelectronics, Peking University, Beijing, 100871, China.
² Institute of Microelectronics, Peking University, Beijing, 100871, China. kangjf@pku.edu.cn.

Abstract

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO _y /HfO _x ] _m /TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.

Keywords: Atomic layer deposition (ALD); Crossbar; Logic operation; RRAM.