We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive responses, we obtain the complete charge stability diagram of the device. Electron transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states, thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of electron transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.
Keywords: Dispersive readout; charge relaxation; double quantum dot; high-frequency resonator; reflectometry; silicon.