Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

A A Krasnov; V V Starkov; S A Legotin; O I Rabinovich; S I Didenko; V N Murashev; V V Cheverikin; E B Yakimov; N A Fedulova; B I Rogozev; A S Laryushkin

doi:10.1016/j.apradiso.2016.12.019

Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

Appl Radiat Isot. 2017 Mar:121:71-75. doi: 10.1016/j.apradiso.2016.12.019. Epub 2016 Dec 23.

Authors

Affiliations

¹ NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
² Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district, Russia.
³ NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia. Electronic address: rabinstudy1@mail.ru.
⁴ NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia; Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district, Russia.
⁵ RITVERC GmbH, 10, Kurchatov St., 194223 St. Petersburg, Russia.
⁶ JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow.

PMID: 28038409
DOI: 10.1016/j.apradiso.2016.12.019

Abstract

In the paper a manufacturing process of three-dimensional (3D) microchannel structure by silicon (Si) anodic etching was discussed. The possibility of microchannels formation allows to increase the active area more than 100 times. In this structure the p-n junction on the whole Si surface was formed. The obtained data allowed to evaluate the characteristics of the betavoltaic converter with a 3D structure by using isotope 63Ni with a specific activity of 10Ci/g.

Keywords: Anodic etching; Betavoltaic effect; Radioisotope (63)Ni; The microchannel silicon.