Characterization of secondary ion emission processes of sub-MeV C60 ion impacts via analysis of statistical distributions of the emitted ion number

K Hirata; K Yamada; A Chiba; K Narumi; Y Saitoh

doi:10.1063/1.4972061

Characterization of secondary ion emission processes of sub-MeV C₆₀ ion impacts via analysis of statistical distributions of the emitted ion number

J Chem Phys. 2016 Dec 21;145(23):234311. doi: 10.1063/1.4972061.

Authors

K Hirata¹, K Yamada², A Chiba², K Narumi², Y Saitoh²

Affiliations

¹ National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan.
² Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology (QST), 1233 Watanuki, Takasaki, Gumma 370-1292, Japan.

PMID: 28010077
DOI: 10.1063/1.4972061

Abstract

We report probability distributions of the number of secondary ions (SIs) emitted by sub-MeV C₆₀ ion impacts on an organic polymer target and the characterization of their emission processes through the analysis of the distributions. The probability distributions were obtained by analyzing experimental SI counting data obtained by a time-of-flight SI mass spectrometer combined with pulsed primary ion beams, using an analytical model developed to derive the distributions from the experimental data. A series of probability distribution functions was investigated for ion impacts of C₆₀ with sub-MeV energies (0.12-0.54 MeV), which can provide sufficient SIs per impact to determine the functions. Their complicated and undefined SI emission processes were characterized based on the determined functions.