A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory

Xiao-Jian She; David Gustafsson; Henning Sirringhaus

doi:10.1002/adma.201604769

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory

Adv Mater. 2017 Feb;29(8). doi: 10.1002/adma.201604769. Epub 2016 Dec 22.

Authors

Xiao-Jian She¹, David Gustafsson², Henning Sirringhaus¹

Affiliations

¹ Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK.
² Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.

PMID: 28004860
DOI: 10.1002/adma.201604769

Abstract

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.

Keywords: nonvolatile memory; polymer electret; vertical organic field-effect transistors; writing speed.