Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai; Bin Chen; Gang Wang; Emmanuel Soignard; Afsaneh Khosravi; Marco Manca; Xavier Marie; Shery L Y Chang; Bernhard Urbaszek; Sefaattin Tongay

doi:10.1002/adma.201605551

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Adv Mater. 2017 Feb;29(8). doi: 10.1002/adma.201605551. Epub 2016 Dec 19.

Authors

Affiliations

¹ School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
² Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
³ LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA.

PMID: 27990702
DOI: 10.1002/adma.201605551

Abstract

A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.

Keywords: gallium telluride; physical vapor transport; pseudo-1D materials.