We study the in situ electro-conductance in nanoscale electronic devices composed of suspended monolayer WS2 with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron beam of 80 keV energy reveals a reversible decrease in conductivity with increasing beam current density. The response time of the electro-conductance when exposed to the electron beam is substantially faster than the recovery time when the beam is turned off. We propose a charge trap model that accounts for excitation of electrons into the conduction band and localized trap states from energy supplied by inelastic scattering of incident 80 keV electrons. These results show how monolayer transition metal dichalcogenide 2D semiconductors can be used as transparent direct electron detectors in ultrathin nanoscale devices.
Keywords: 2D; TEM; WS2; electro-conductance; in situ.