Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane

Hua Yu; Zhengzhong Yang; Luojun Du; Jing Zhang; Jinan Shi; Wei Chen; Peng Chen; Mengzhou Liao; Jing Zhao; Jianling Meng; Guole Wang; Jianqi Zhu; Rong Yang; Dongxia Shi; Lin Gu; Guangyu Zhang

doi:10.1002/smll.201603005

Precisely Aligned Monolayer MoS₂ Epitaxially Grown on h-BN basal Plane

Small. 2017 Feb;13(7). doi: 10.1002/smll.201603005. Epub 2016 Dec 7.

Authors

Hua Yu^{1

2}, Zhengzhong Yang^{1

2}, Luojun Du^{1

3}, Jing Zhang^{1

2}, Jinan Shi^{1

2}, Wei Chen⁴, Peng Chen^{1

2}, Mengzhou Liao^{1

2}, Jing Zhao^{1

2}, Jianling Meng^{1

2}, Guole Wang^{1

2}, Jianqi Zhu^{1

2}, Rong Yang^{1

2

5}, Dongxia Shi^{1

2

5}, Lin Gu^{1

6}, Guangyu Zhang^{1

2

5

6}

Affiliations

¹ Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
² School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
³ Department of Physics, Renmin University of China, Beijing, 100872, China.
⁴ College of Physics and Electronic Information, Gannan Normal University, Jiangxi, 341000, China.
⁵ Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
⁶ Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.

PMID: 27925390
DOI: 10.1002/smll.201603005

Abstract

Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS₂ ) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS₂ domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS₂ and h-BN basal plane are present. Domains with same orientation stitch and form single-crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth.

Keywords: CVD; domain boundary; epitaxial growth; monolayer MoS2; rotational alignment.

Publication types

Research Support, Non-U.S. Gov't