Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene

Yoshihiro Kubozono; Keita Hyodo; Shino Hamao; Yuma Shimo; Hiroki Mori; Yasushi Nishihara

doi:10.1038/srep38535

Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene

Sci Rep. 2016 Dec 6:6:38535. doi: 10.1038/srep38535.

Authors

Yoshihiro Kubozono^{1

2}, Keita Hyodo³, Shino Hamao^{1

2}, Yuma Shimo¹, Hiroki Mori², Yasushi Nishihara²

Affiliations

¹ Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
² Research Institute for Interdisciplinary Science, Okayama University, Okayama 700-8530, Japan.
³ Division of Earth, Life, and Molecular Sciences, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan.

Abstract

A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b']dithiophene ((C₁₂H₂₅)₂-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm² V^-1 s^-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm² V^-1 s^-1, when a 150 nm-thick ZrO₂ gate dielectric was used. This implies that (C₁₂H₂₅)₂-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.

Publication types

Research Support, Non-U.S. Gov't