PbS Colloidal Quantum Dot Photodetectors operating in the near infrared

Andrea De Iacovo; Carlo Venettacci; Lorenzo Colace; Leonardo Scopa; Sabrina Foglia

doi:10.1038/srep37913

PbS Colloidal Quantum Dot Photodetectors operating in the near infrared

Sci Rep. 2016 Nov 25:6:37913. doi: 10.1038/srep37913.

Authors

Andrea De Iacovo¹, Carlo Venettacci¹, Lorenzo Colace¹, Leonardo Scopa², Sabrina Foglia²

Affiliations

¹ NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy.
² CNR, Istituto dei Materiali per l'Elettronica ed il Magnetismo, Rome, Italy.

Abstract

Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 μm and 1 V bias with maximum values of 30 A/W and 2·10¹⁰ cmHz^1/2W^-1, respectively. Detectivity close to 10¹¹ cmHz^1/2W^-1 has been obtained resorting to bridge sensor readout.