Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors

Sheng Yu; Hao Zhu; Kwesi Eshun; Chen Shi; Min Zeng; Kai Jiang; Qiliang Li

doi:10.1039/c6cp05810h

Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors

Phys Chem Chem Phys. 2016 Nov 30;18(47):32521-32527. doi: 10.1039/c6cp05810h.

Authors

Sheng Yu¹, Hao Zhu², Kwesi Eshun¹, Chen Shi¹, Min Zeng³, Kai Jiang¹, Qiliang Li¹

Affiliations

¹ Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
² Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
³ Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu and Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China.

PMID: 27874108
DOI: 10.1039/c6cp05810h

Abstract

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principles computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (L_c) along the axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at L_c ranging from 3.90 Å to 4.10 Å. In particular, a field effect transistor (FET) based on 12-ZPNT (with 12 unit cells in the transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at L_c = 4.60 Å. However, only weak gate modulation is demonstrated when the nanotube becomes a semimetal at L_c = 4.10 Å. This study indicates that ZPNTs are profoundly appealing for applications in strain sensors. Our findings pave the way for the development of high-performance strain-engineered electronics based on Dirac fermions in 1D materials.