Epitaxial growth of BaHfO3 buffer layer and its structure degeneration analysed by Raman spectrum

Jiahui Zheng; Feng Fan; Xiangfa Yan; Yuming Lu; Yu Liang; Chuanyi Bai; Zhiyong Liu; Yanqun Guo; Chuanbing Cai

doi:10.1186/s40064-016-3563-9

Epitaxial growth of BaHfO₃ buffer layer and its structure degeneration analysed by Raman spectrum

Springerplus. 2016 Nov 3;5(1):1908. doi: 10.1186/s40064-016-3563-9. eCollection 2016.

Authors

Jiahui Zheng¹, Feng Fan¹, Xiangfa Yan¹, Yuming Lu¹, Yu Liang², Chuanyi Bai¹, Zhiyong Liu¹, Yanqun Guo¹, Chuanbing Cai¹

Affiliations

¹ Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai, 200444 China.
² Shanghai Creative Superconductor Technologies Co., Ltd, Fengxian District, Shanghai, 201401 China.

Abstract

BaHfO₃ (BHO) has been proposed as a new cap layer material for YBa₂Cu₃O_7-δ (YBCO) coated conductors. Highly c-axis oriented BHO cap layer has been deposited on ion-beam assisted deposition-MgO buffered Hastelloy tapes by direct-current-magnetron sputtering method. The epi-growth of BHO films combined with its properties is investigated in details. The degenerated cubic crystal structure of BHO film is confirmed by Raman spectrum analysis. XRD θ-2θ scan, φ-scan and ω-scan reveal an excellent c-axis alignment with good in-plane and out-of-plane textures for BHO cap layers. SEM and AFM investigations show BHO cap layer a dense and crack-free morphology. Subsequently pure c-axis orientation YBCO film was epitaxial grown on such BHO cap layer successfully, shown BaHfO₃ a potential cap layer material for coated conductors.

Keywords: BaHfO3; Cap layer; Coated conductors; Magnetron sputtering; Raman.