Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo; Ziyao Lu; Chengyue Xiong; Tao Zhu; Wei Wu; Qiang Zhang; Huaqiang Wu; Xixiang Zhang; Xiaozhong Zhang

doi:10.1002/adma.201605027

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Adv Mater. 2017 Jan;29(4). doi: 10.1002/adma.201605027. Epub 2016 Nov 15.

Authors

Zhaochu Luo¹, Ziyao Lu¹, Chengyue Xiong¹, Tao Zhu², Wei Wu³, Qiang Zhang⁴, Huaqiang Wu³, Xixiang Zhang⁴, Xiaozhong Zhang¹

Affiliations

¹ Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, China.
² Institute of Physics, Chinese Academy of Sciences, Beijing, 100084, China.
³ Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
⁴ Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 239955, Kingdom of Saudi Arabia.

PMID: 27862413
DOI: 10.1002/adma.201605027

Abstract

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10³ %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

Keywords: anomalous Hall effect; magnetic logic; negative differential resistance; nonvolatile memory; spin Hall effect.