Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

Tessy Theres Baby; Manuel Rommel; Falk von Seggern; Pascal Friederich; Christian Reitz; Simone Dehm; Christian Kübel; Wolfgang Wenzel; Horst Hahn; Subho Dasgupta

doi:10.1002/adma.201603858

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

Adv Mater. 2017 Jan;29(4). doi: 10.1002/adma.201603858. Epub 2016 Nov 18.

Authors

Tessy Theres Baby¹, Manuel Rommel¹, Falk von Seggern^{1

2}, Pascal Friederich¹, Christian Reitz¹, Simone Dehm¹, Christian Kübel^{1

3}, Wolfgang Wenzel¹, Horst Hahn^{1

2}, Subho Dasgupta^{1

4}

Affiliations

¹ Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
² KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany.
³ Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
⁴ Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India.

PMID: 27859773
DOI: 10.1002/adma.201603858

Abstract

A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm^-2 .

Keywords: composite solid polymer electrolytes; current density; ink-jet printing; porous semiconductors; vertical field-effect transistors.