High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Lisheng Zhang; Fujun Xu; Jiaming Wang; Chenguang He; Weiwei Guo; Mingxing Wang; Bowen Sheng; Lin Lu; Zhixin Qin; Xinqiang Wang; Bo Shen

doi:10.1038/srep35934

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Sci Rep. 2016 Nov 4:6:35934. doi: 10.1038/srep35934.

Authors

Lisheng Zhang¹, Fujun Xu¹, Jiaming Wang¹, Chenguang He¹, Weiwei Guo¹, Mingxing Wang¹, Bowen Sheng¹, Lin Lu², Zhixin Qin¹, Xinqiang Wang^{1

3}, Bo Shen^{1

3}

Affiliations

¹ State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
² Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University, Wuhu 241000, China.
³ Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.

Abstract

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

Publication types

Research Support, Non-U.S. Gov't