MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits

Xuexia He; WaiLeong Chow; Fucai Liu; BengKang Tay; Zheng Liu

doi:10.1002/smll.201602558

MoS₂ /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits

Small. 2017 Jan;13(2). doi: 10.1002/smll.201602558. Epub 2016 Oct 20.

Authors

Xuexia He^{1

2}, WaiLeong Chow³, Fucai Liu², BengKang Tay³, Zheng Liu²

Affiliations

¹ School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China.
² Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
³ Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.

PMID: 27762499
DOI: 10.1002/smll.201602558

Abstract

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS₂ ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS₂ and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm² V^-1 s^-1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS₂ and rubrene. Furthermore, being a building block, the MoS₂ /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.

Keywords: 2D materials; ambipolar; field-effect transistors; heterostructures; inverter circuits.