Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

Wei-Yu Kong; Guo-An Wu; Kui-Yuan Wang; Teng-Fei Zhang; Yi-Feng Zou; Dan-Dan Wang; Lin-Bao Luo

doi:10.1002/adma.201604049

Graphene-β-Ga₂ O₃ Heterojunction for Highly Sensitive Deep UV Photodetector Application

Adv Mater. 2016 Dec;28(48):10725-10731. doi: 10.1002/adma.201604049. Epub 2016 Oct 17.

Authors

Wei-Yu Kong¹, Guo-An Wu¹, Kui-Yuan Wang¹, Teng-Fei Zhang¹, Yi-Feng Zou¹, Dan-Dan Wang¹, Lin-Bao Luo¹

Affiliation

¹ School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.

PMID: 27748975
DOI: 10.1002/adma.201604049

Abstract

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga₂ O₃ ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.

Keywords: Schottky junction; deep UV light photodetector; graphene; responsivity; wide bandgap.