Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Yoichi Tanabe; Yoshikazu Ito; Katsuaki Sugawara; Daisuke Hojo; Mikito Koshino; Takeshi Fujita; Tsutomu Aida; Xiandong Xu; Khuong Kim Huynh; Hidekazu Shimotani; Tadafumi Adschiri; Takashi Takahashi; Katsumi Tanigaki; Hideo Aoki; Mingwei Chen

doi:10.1002/adma.201601067

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Adv Mater. 2016 Dec;28(46):10304-10310. doi: 10.1002/adma.201601067. Epub 2016 Oct 11.

Authors

Yoichi Tanabe¹, Yoshikazu Ito², Katsuaki Sugawara², Daisuke Hojo², Mikito Koshino¹, Takeshi Fujita², Tsutomu Aida³, Xiandong Xu², Khuong Kim Huynh², Hidekazu Shimotani¹, Tadafumi Adschiri², Takashi Takahashi^{1

2}, Katsumi Tanigaki^{1

2}, Hideo Aoki⁴, Mingwei Chen^{2

5

6}

Affiliations

¹ Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
² WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
³ New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, 980-8579, Japan.
⁴ Department of Physics, University of Tokyo, Hongo, Tokyo, 113-0033, Japan.
⁵ CREST, Japan Science and Technology Agency, Saitama, 332-0012, Japan.
⁶ Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, 21214, USA.

PMID: 27726184
DOI: 10.1002/adma.201601067

Abstract

Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.

Keywords: 3D nanoporous materials; CVD growth; electric transport; field effect transistors; graphene.