Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

Francesca Leonardi; Stefano Casalini; Qiaoming Zhang; Sergi Galindo; Diego Gutiérrez; Marta Mas-Torrent

doi:10.1002/adma.201602479

Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

Adv Mater. 2016 Dec;28(46):10311-10316. doi: 10.1002/adma.201602479. Epub 2016 Oct 10.

Authors

Francesca Leonardi¹, Stefano Casalini¹, Qiaoming Zhang¹, Sergi Galindo¹, Diego Gutiérrez¹, Marta Mas-Torrent¹

Affiliation

¹ Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.

PMID: 27723255
DOI: 10.1002/adma.201602479

Abstract

This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.

Keywords: organic field-effect transistors; organic large-area electronics; organic semiconductors; printable electronics; solution shearing.