Highly Air-Stable Electron-Transport Material for Ink-Jet-Printed OLEDs

Changting Wei; Jinyong Zhuang; Yali Chen; Dongyu Zhang; Wenming Su; Zheng Cui

doi:10.1002/chem.201603994

Highly Air-Stable Electron-Transport Material for Ink-Jet-Printed OLEDs

Chemistry. 2016 Nov 7;22(46):16576-16585. doi: 10.1002/chem.201603994. Epub 2016 Oct 10.

Authors

Changting Wei^{1

2}, Jinyong Zhuang³, Yali Chen², Dongyu Zhang¹, Wenming Su⁴, Zheng Cui¹

Affiliations

¹ Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China.
² Department of Chemistry, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai, 200444, P. R. China.
³ Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China. jyzhuang2010@sinano.ac.cn.
⁴ Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China. wmsu2008@sinano.ac.cn.

PMID: 27723156
DOI: 10.1002/chem.201603994

Abstract

A novel cross-linkable electron-transport material has been designed and synthesized for use in the fabrication of solution-processed OLEDs. The material exhibits a low LUMO level of -3.51 eV, a high electron mobility of 1.5×10^-5 cm² V^-1 s^-1 , and excellent stability. An average 9.3 % shrinkage in film thickness was observed for the film after thermal curing. A maximum external quantum efficiency (EQE) of 15.6 % (35.0 cd A^-1 ) was achieved for blue-phosphorescent OLEDs by spin-coating and 13.8 % (31.0 cd A^-1 ) for an ink-jet-printed device, both of which are better than the EQE of a control device prepared by vacuum-deposition (see figure).

Keywords: electrochemistry; electron transport; luminescence; organic light-emitting diodes; thin films.