Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

Agnieszka Bogusz; Danilo Bürger; Ilona Skorupa; Oliver G Schmidt; Heidemarie Schmidt

doi:10.1088/0957-4484/27/45/455201

Bipolar resistive switching in YMnO₃/Nb:SrTiO₃ pn-heterojunctions

Nanotechnology. 2016 Nov 11;27(45):455201. doi: 10.1088/0957-4484/27/45/455201. Epub 2016 Oct 3.

Authors

Agnieszka Bogusz¹, Danilo Bürger, Ilona Skorupa, Oliver G Schmidt, Heidemarie Schmidt

Affiliation

¹ Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, Germany. Material Systems for Nanoelectronics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.

PMID: 27694695
DOI: 10.1088/0957-4484/27/45/455201

Abstract

Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO₃/Nb:SrTiO₃ pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO₃/Nb:SrTiO₃ originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO₃ thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.