Inorganic Double Helices in Semiconducting SnIP

Adv Mater. 2016 Nov;28(44):9783-9791. doi: 10.1002/adma.201603135. Epub 2016 Sep 14.

Abstract

SnIP is the first atomic-scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right- and left-handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes.

Keywords: double helices; nanorods; photoluminescence; quantum-confinement; semiconductor.