Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition

Miguel Quesada-González; Nicolas D Boscher; Claire J Carmalt; Ivan P Parkin

doi:10.1021/acsami.6b09560

Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition

ACS Appl Mater Interfaces. 2016 Sep 28;8(38):25024-9. doi: 10.1021/acsami.6b09560. Epub 2016 Sep 15.

Authors

Miguel Quesada-González^{1

2}, Nicolas D Boscher², Claire J Carmalt¹, Ivan P Parkin¹

Affiliations

¹ Materials Chemistry Research Centre, Department of Chemistry, University College London , 20 Gordon Street, London WC1H 0AJ, United Kingdom.
² Department of Materials Research and Technology, Luxembourg Institute of Science and Technology , 5 Avenue des Hauts-Fourneaux, Esch-sur-Alzette L-4362, Luxembourg.

PMID: 27622709
DOI: 10.1021/acsami.6b09560

Abstract

The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

Keywords: atmospheric pressure chemical vapor deposition (APCVD); enhancement of average crystal size; interstitial boron-doped TiO2; photoactive thin films.