Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory

Donghee Son; Sue In Chae; Myungbin Kim; Moon Kee Choi; Jiwoong Yang; Kunsu Park; Vinayak S Kale; Ja Hoon Koo; Changsoon Choi; Minbaek Lee; Ji Hoon Kim; Taeghwan Hyeon; Dae-Hyeong Kim

doi:10.1002/adma.201602391

Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory

Adv Mater. 2016 Nov;28(42):9326-9332. doi: 10.1002/adma.201602391. Epub 2016 Aug 29.

Authors

Donghee Son^{1

2}, Sue In Chae^{1

2}, Myungbin Kim^{1

2}, Moon Kee Choi^{1

2}, Jiwoong Yang^{1

2}, Kunsu Park^{1

2}, Vinayak S Kale^{1

2}, Ja Hoon Koo^{1

2

3}, Changsoon Choi^{1

2}, Minbaek Lee⁴, Ji Hoon Kim⁵, Taeghwan Hyeon^{1

2}, Dae-Hyeong Kim^{1

2}

Affiliations

¹ Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
² School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
³ Interdisciplinary Program for Bioengineering, Seoul National University, Seoul, 08826, Republic of Korea.
⁴ Department of Physics, Inha University, Incheon, 22212, Republic of Korea.
⁵ School of Mechanical Engineering, Pusan National University, Busan, 46269, Republic of Korea.

PMID: 27571382
DOI: 10.1002/adma.201602391

Abstract

Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfide (MoS₂ ) nanosheets for a flexible resistive random access memory (RRAM) array are presented. RRAM using MoS₂ nanosheets shows a ≈10 000 times higher on/off ratio than that based on exfoliated MoS₂ . The good uniformity of the MoS₂ nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.

Keywords: MoS2 nanosheets; colloidal synthesis; flexible electronics; resistive random access memory.