Fabrication of Multilayer Borophene on Insulator Structure

Hsu-Sheng Tsai; Ching-Hung Hsiao; Yu-Pin Lin; Chia-Wei Chen; Hao Ouyang; Jenq-Horng Liang

doi:10.1002/smll.201601915

Fabrication of Multilayer Borophene on Insulator Structure

Small. 2016 Oct;12(38):5251-5255. doi: 10.1002/smll.201601915. Epub 2016 Aug 12.

Authors

Hsu-Sheng Tsai¹, Ching-Hung Hsiao², Yu-Pin Lin³, Chia-Wei Chen², Hao Ouyang², Jenq-Horng Liang^{4

5}

Affiliations

¹ Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, R. O. C.. b91520016@yahoo.com.tw.
² Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.
³ Department of Material Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30013, R. O. C.
⁴ Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, R. O. C.. jhliang@ess.nthu.edu.tw.
⁵ Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.. jhliang@ess.nthu.edu.tw.

PMID: 27516126
DOI: 10.1002/smll.201601915

Abstract

The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer β-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer β-borophene is announced in this study.

Keywords: borophene; ion implantation; plasma.