Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Binh H Le; Songrui Zhao; Xianhe Liu; Steffi Y Woo; Gianluigi A Botton; Zetian Mi

doi:10.1002/adma.201602645

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Adv Mater. 2016 Oct;28(38):8446-8454. doi: 10.1002/adma.201602645. Epub 2016 Aug 4.

Authors

Binh H Le¹, Songrui Zhao¹, Xianhe Liu¹, Steffi Y Woo², Gianluigi A Botton², Zetian Mi³

Affiliations

¹ Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada.
² Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4M1, Canada.
³ Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada. zetian.mi@mcgill.ca.

PMID: 27489074
DOI: 10.1002/adma.201602645

Abstract

Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nanowire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.

Keywords: AlGaN; GaN; coalescence; light-emitting diodes; nanowires; selective area growth; ultraviolet.