Recently, the through-Si-via (TSV) had been focused as an optimal solution for interconnecting the 3-dimensionaly stacked semiconductor devices. One of core processes in the TSV technology is the Cu filling process which electrochemically forms the Cu in the via with high aspect ratio. The nanotwin Cu is effective candidate for replacing the conventional electrodeposited Cu due to its ultrahigh mechanical strength and good electrical conductivity. In this work, the formation of the nanotwin Cu in the TSV by applying pulse current was systematically studied. Also, TSV filling behavior by electrodeposition with pulse current was compared with direct current. The variation of mechanical properties as well as the electrical resistivity of electrodeposited Cu by the pulse current also investigated.