This paper presents an analysis of the Random Telegraph Noise (RTN) of the Gate-Induced Drain Leakage (GIDL) of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The RTN data that was measured and analytical equations are used to extract the values of the parameters for the vertical distance of the oxide trap from the interface and of the energy level of the interface trap. These values and equations allow for the distance r between the interface trap and the oxide trap to be extracted. For the first time, the accurate field enhancement factor γ(F), which depends on the magnitude of the electric field at the Si/SiO2 interface, was used to calculate the current ratio before and after the electron trapping, and the value extracted for r is completely different depending on the enhancement factor that is used.