Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Sébastien Pecqueur; Anna Maltenberger; Marina A Petrukhina; Marcus Halik; Arndt Jaeger; Dominik Pentlehner; Günter Schmid

doi:10.1002/anie.201601926

Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

Angew Chem Int Ed Engl. 2016 Aug 22;55(35):10493-7. doi: 10.1002/anie.201601926. Epub 2016 Jul 21.

Authors

Sébastien Pecqueur^{1

2

3}, Anna Maltenberger¹, Marina A Petrukhina⁴, Marcus Halik², Arndt Jaeger^{5

6}, Dominik Pentlehner⁵, Günter Schmid⁷

Affiliations

¹ Siemens AG-Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058, Erlangen, Germany.
² Organic Materials and Devices, University Erlangen-Nuremberg, Martensstrasse 7, 91058, Erlangen, Germany.
³ Institute of Electronic Microelectronics and Nanotechnology, Av. Poincaré, 59652, Villeneuve d'Ascq, France.
⁴ Department of Chemistry, University at Albany, 1400 Washington Avenue, Albany, NY, 12222, USA.
⁵ Osram OLED GmbH, Wernerwerkstrasse 2, 93049, Regensburg, Germany.
⁶ University of Applied Science at Esslingen, Flandernstrasse 101, 73732, Esslingen, Germany.
⁷ Siemens AG-Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058, Erlangen, Germany. guenter.schmid@siemens.com.

PMID: 27440434
DOI: 10.1002/anie.201601926

Abstract

Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

Keywords: OLEDs; bismuth; donor-acceptor systems; doping; organic electronics.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't