Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

Yanping Wei; Cunxu Gao; Zhendong Chen; Shibo Xi; Weixia Shao; Peng Zhang; Guilin Chen; Jiangong Li

doi:10.1038/srep30002

Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

Sci Rep. 2016 Jul 15:6:30002. doi: 10.1038/srep30002.

Authors

Yanping Wei¹, Cunxu Gao¹, Zhendong Chen¹, Shibo Xi², Weixia Shao², Peng Zhang¹, Guilin Chen¹, Jiangong Li¹

Affiliations

¹ Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
² Institute of Chemical &Engineering Sciences, Agency for Science, Technology and Research, Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore.

Abstract

We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

Publication types

Research Support, Non-U.S. Gov't