Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy

Yaxu Gu; Wanqi Jie; Caicai Rong; Lingyan Xu; Yadong Xu; Haoyan Lv; Hao Shen; Guanghua Du; Na Guo; Rongrong Guo; Gangqiang Zha; Tao Wang; Shouzhi Xi

doi:10.1016/j.micron.2016.06.003

Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy

Micron. 2016 Sep:88:54-9. doi: 10.1016/j.micron.2016.06.003. Epub 2016 Jun 23.

Authors

Yaxu Gu¹, Wanqi Jie², Caicai Rong³, Lingyan Xu¹, Yadong Xu¹, Haoyan Lv³, Hao Shen³, Guanghua Du⁴, Na Guo⁵, Rongrong Guo¹, Gangqiang Zha¹, Tao Wang¹, Shouzhi Xi¹

Affiliations

¹ State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China.
² State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China. Electronic address: jwq@nwpu.edu.cn.
³ Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, PR China.
⁴ Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China.
⁵ Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, PR China. Electronic address: 15110200003@fudan.edu.cn.

PMID: 27399802
DOI: 10.1016/j.micron.2016.06.003

Abstract

The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects.

Keywords: Bias dependent; CdZnTe; Ion beam induced charge microscopy; Proton; Radiation damage.