High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

Jingli Wang; Qian Yao; Chun-Wei Huang; Xuming Zou; Lei Liao; Shanshan Chen; Zhiyong Fan; Kai Zhang; Wei Wu; Xiangheng Xiao; Changzhong Jiang; Wen-Wei Wu

doi:10.1002/adma.201602757

High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

Adv Mater. 2016 Oct;28(37):8302-8308. doi: 10.1002/adma.201602757. Epub 2016 Jul 8.

Authors

Jingli Wang¹, Qian Yao², Chun-Wei Huang³, Xuming Zou¹, Lei Liao⁴, Shanshan Chen², Zhiyong Fan⁵, Kai Zhang⁶, Wei Wu¹, Xiangheng Xiao¹, Changzhong Jiang¹, Wen-Wei Wu³

Affiliations

¹ Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
² Department of Physics and Lab Nanoscale Condense Matter Physics, Xiamen University, Xiamen, 361005, China.
³ Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
⁴ Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China. liaolei@whu.edu.cn.
⁵ Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
⁶ Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215000, China.

PMID: 27387603
DOI: 10.1002/adma.201602757

Abstract

High-performance MoS₂ transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS₂ . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.

Keywords: MoS2; contact resistance; hexagonal boron nitride; tunneling.