Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation

Xufan Li; Ming-Wei Lin; Leonardo Basile; Saban M Hus; Alexander A Puretzky; Jaekwang Lee; Yen-Chien Kuo; Lo-Yueh Chang; Kai Wang; Juan C Idrobo; An-Ping Li; Chia-Hao Chen; Christopher M Rouleau; David B Geohegan; Kai Xiao

doi:10.1002/adma.201601991

Isoelectronic Tungsten Doping in Monolayer MoSe₂ for Carrier Type Modulation

Adv Mater. 2016 Oct;28(37):8240-8247. doi: 10.1002/adma.201601991. Epub 2016 Jul 6.

Authors

Affiliations

¹ Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
² Departamento de Física, Escuela Politécnica Nacional, Quito, 17012759, Ecuador.
³ Department of Physics, Pusan National University, Busan, 609-735, South Korea.
⁴ National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 30076, Taiwan.
⁵ Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA. xiaok@ornl.gov.

PMID: 27384240
DOI: 10.1002/adma.201601991

Abstract

Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe₂ is converted to nondegenerate p-type monolayer Mo_1-_x W_x Se₂ through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo_1-_x W_x Se₂ appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice.

Keywords: Mo1-xWxSe2; alloys; carrier type modulation; isoelectronic; p−n homojunctions.