Atomic Layers: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016)

Fangfang Cui; Cong Wang; Xiaobo Li; Gang Wang; Kaiqiang Liu; Zhou Yang; Qingliang Feng; Xing Liang; Zhongyue Zhang; Shengzhong Liu; Zhibin Lei; Zonghuai Liu; Hua Xu; Jin Zhang

doi:10.1002/adma.201670175

Atomic Layers: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016)

Adv Mater. 2016 Jul;28(25):5018. doi: 10.1002/adma.201670175.

Authors

Fangfang Cui¹, Cong Wang¹, Xiaobo Li¹, Gang Wang², Kaiqiang Liu³, Zhou Yang¹, Qingliang Feng⁴, Xing Liang¹, Zhongyue Zhang², Shengzhong Liu¹, Zhibin Lei¹, Zonghuai Liu¹, Hua Xu¹, Jin Zhang⁴

Affiliations

¹ School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
² School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, P. R. China.
³ School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
⁴ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

PMID: 27372721
DOI: 10.1002/adma.201670175

Abstract

H. Xu, J. Zhang, and co-workers synthesize anisotropic 2D-layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium-assisted epitaxial growth on a mica substrate is chosen to generate such structures.

Keywords: 2D anisotropic materials; Re-Te binary eutectic; epitaxial growth; high crystal quality; rhenium disulphide (ReS2).