High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

Junichi Nomoto; Hisao Makino; Tetsuya Yamamoto

doi:10.1186/s11671-016-1535-1

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

Nanoscale Res Lett. 2016 Dec;11(1):320. doi: 10.1186/s11671-016-1535-1. Epub 2016 Jun 30.

Authors

Junichi Nomoto¹, Hisao Makino², Tetsuya Yamamoto²

Affiliations

¹ Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi, 782-8502, Japan. nomoto.junichi@kochi-tech.ac.jp.
² Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi, 782-8502, Japan.

Abstract

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

Keywords: Al-doped ZnO; Carrier transport; Ga-doped ZnO; Ion plating; Magnetron sputtering; Transparent conducting oxide; X-ray diffraction.