Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation

Truong Khang Nguyen; Khai Q Le; Adil Canimoglu; Nurdogan Can

doi:10.1016/j.apradiso.2016.06.014

Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation

Appl Radiat Isot. 2016 Sep:115:109-112. doi: 10.1016/j.apradiso.2016.06.014. Epub 2016 Jun 16.

Authors

Truong Khang Nguyen¹, Khai Q Le¹, Adil Canimoglu², Nurdogan Can³

Affiliations

¹ Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam; Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam.
² Nigde University, Faculty of Arts and Sciences, Physics Department, Nigde, Turkey.
³ Physics Department, Jazan University, P.O. Box 114, Jazan, Saudi Arabia; Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye-Manisa, Turkey. Electronic address: cannurdogan@yahoo.com.

PMID: 27344525
DOI: 10.1016/j.apradiso.2016.06.014

Abstract

In this study, we investigate optical properties of metal nanoparticle crystals fabricated by implanting copper (Cu) ions into single silica (SiO2) crystals with 400keV at various ion doses. The Cu implanted SiO2 (SiO2:Cu) crystal produces a broadband luminescence emission, ranging from blue to yellow, and having a blue luminescence peak at 546nm. Such anomalous luminescence emission bands suggest that the ion implantation may give rise to aggregation of Cu nanoparticles in the host matrix. The boundary element method-based modelling of a given Cu nanoparticle aggregation was employed to justify the broadband luminescence emission. Formation of Cu nanoparticles in SiO2 is predicted through their optical absorption data. The experimental results are compared with results of Mie calculations and we observe that the higher ion dose produces the larger particle size.

Keywords: Ion implantation; Luminescence; Metallic nanoparticles; Nanoparticle aggregation; SiO(2).