The surface electronic structure of silicon terminated (100) diamond

A K Schenk; A Tadich; M J Sear; D Qi; A T S Wee; A Stacey; C I Pakes

doi:10.1088/0957-4484/27/27/275201

The surface electronic structure of silicon terminated (100) diamond

Nanotechnology. 2016 Jul 8;27(27):275201. doi: 10.1088/0957-4484/27/27/275201. Epub 2016 May 23.

Authors

A K Schenk¹, A Tadich, M J Sear, D Qi, A T S Wee, A Stacey, C I Pakes

Affiliation

¹ Department of Chemistry and Physics, La Trobe Institute for Molecular Sciences, La Trobe University, Victoria 3086, Australia.

PMID: 27211214
DOI: 10.1088/0957-4484/27/27/275201

Abstract

A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.