Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles

Chem Commun (Camb). 2016 Jun 7;52(45):7269-72. doi: 10.1039/c6cc02750d. Epub 2016 May 16.

Abstract

Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.