High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Rongrui He; Todd D Day; Justin R Sparks; Nichole F Sullivan; John V Badding

doi:10.1002/adma.201600415

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Adv Mater. 2016 Jul;28(28):5939-42. doi: 10.1002/adma.201600415. Epub 2016 May 13.

Authors

Rongrui He¹, Todd D Day¹, Justin R Sparks¹, Nichole F Sullivan¹, John V Badding^{1

2}

Affiliations

¹ Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA, 16802, USA.
² Department of Physics, Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA.

PMID: 27174318
DOI: 10.1002/adma.201600415

Abstract

Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors.

Keywords: chemical vapor deposition; flexible electronics; hydrogenated amorphous silicon; solar cells; thin films.