Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films

Simone G Altendorf; Jaewoo Jeong; Donata Passarello; Nagaphani B Aetukuri; Mahesh G Samant; Stuart S P Parkin

doi:10.1002/adma.201505631

Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films

Adv Mater. 2016 Jul;28(26):5284-92. doi: 10.1002/adma.201505631. Epub 2016 May 9.

Authors

Simone G Altendorf^{1

2}, Jaewoo Jeong¹, Donata Passarello^{1

3

4}, Nagaphani B Aetukuri¹, Mahesh G Samant¹, Stuart S P Parkin^{1

2}

Affiliations

¹ IBM Almaden Research Center, San Jose, CA, 95120, USA.
² Max Planck Institute for Microstructure Physics, 06120, Halle, Germany.
³ Graduate School of Excellence Materials Science in Mainz, Johannes Gutenberg University, Staudingerweg 9, 55128, Mainz, Germany.
⁴ Fachbereich Physik, University of Kaiserslautern, Erwin-Schrödinger-Strasse 56, 67663, Kaiserslautern, Germany.

PMID: 27159503
DOI: 10.1002/adma.201505631

Abstract

Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.

Keywords: insulator-to-metal transition; ionic-liquid gating; oxygen vacancies; tungsten trioxide.