Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy (Small 17/2016)

Jafar I Khan; Aniruddha Adhikari; Jingya Sun; Davide Priante; Riya Bose; Basamat S Shaheen; Tien Khee Ng; Chao Zhao; Osman M Bakr; Boon S Ooi; Omar F Mohammed

doi:10.1002/smll.201670087

Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy (Small 17/2016)

Small. 2016 May;12(17):2312. doi: 10.1002/smll.201670087.

Authors

Affiliations

¹ Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
² Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.

PMID: 27124006
DOI: 10.1002/smll.201670087

Abstract

Selective mapping of surface charge carrier dynamics of InGaN nanowires before and after surface passivation with octadecylthiol (ODT) is reported by O. F. Mohammed and co-workers on page 2313, using scanning ultrafast electron microscopy. In a typical experiment, the 343 nm output of the laser beam is used to excite the microscope tip to generate pulsed electrons for probing, and the 515 nm output is used as a clocking excitation pulse to initiate dynamics. Time-resolved images demonstrate clearly that carrier recombination is significantly slowed after ODT treatment, which supports the efficient removal of surface trap states.

Keywords: 4D ultrafast microscopy; InGaN nanowires; carrier recombination; charge carrier dynamics; passivation.